Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar, Raghuveer S. Makala, “Ferroelectric field effect transistors having enhanced memory window and methods of making the same_A”, US Patent 11,996,462, (May 2024), Granted

Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same – Part A”, US Patent, US11887640B2, (Jan 2024), Granted

Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same – Part B”, US Patent, US11889702B2, (Jan 2024), Granted

Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same – Part C”, US Patent, US11871679B2, (Jan 2024), Granted

Alan Kalitsov, Derek Stewart, Bhagwati Prasad, Goran Mihajlović “Magnetoresistive memory device including a plurality of reference layers, US Patent, US11839162B2, (Dec 2023), Granted

Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar, Raghuveer S. Makala, “Ferroelectric field effect transistors having enhanced memory window and methods of making the same”, US Patent: US011545506B2 (Jan, 2023) and PCT:  WO-2022103436-A1 Granted

Bhagwati Prasad, Rahul Sharangpani, “Antiferroelectric memory devices and methods of making the same” US Patent: US011502104B2 (Nov 2022) Granted

Bhagwati Prasad, Derek Stewart, Matt Carey, Tiffany Santos, “Spinel containing magnetic tunnel junction and method of making the same” US Patent: US011443790B2 (Sept 2022) Granted

Alan Kalitsov, Bhagwati Prasad, Derek Stewart, “Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same”, US Patent: US011411170B2 (August 2022) Granted

Alan Kalitsov, Bhagwati Prasad, Derek Stewart, “Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same”, US Patent: US011417379B2 (August 2022) & PCT: WO-2022093324-A1 Granted

Bhagwati Prasad, Rahul Sharangpani, “Antiferroelectric memory devices and methods of making the same” US Patent: US011502104B2 (Nov 2022) Granted

Bhagwati Prasad, Derek Stewart, Matt Carey, Tiffany Santos, “Spinel containing magnetic tunnel junction and method of making the same” US Patent: US011443790B2 (Sept 2022) Granted

Alan Kalitsov, Bhagwati Prasad, Derek Stewart, “Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same”, US Patent: US011411170B2 (August 2022) Granted

Alan Kalitsov, Bhagwati Prasad, Derek Stewart, “Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same”, US Patent: US011417379B2 (August 2022) Granted

Bhagwati Prasad, Rahul Sharangpani, “Antiferroelectric memory devices and methods of making the same” Filed US Patent, Application no.” 17/081,147 (2020). US Patent: US011430813B2 (August 2022) Granted

Bhagwati Prasad, “Magnetoresistive memory device including a magnesium containing dust layer”, US Patent: US011404193B2 (August 2022) Granted

Bhagwati Prasad, “Magnetoresistive memory device including a magnesium containing dust layer”, US Patent: US011404632B2 (August 2022) Granted

Goran Mihajlović, Wonjoon Jung, Bhagwati Prasad, “Magnetoresistive memory device including a reference layer side dielectric spacer layer”,US Patent: US011361805B2 (June 2022) Granted

Alan Kalitsov, Bhagwati Prasad, Derek Stewart, “Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same ”, US Patent : US 20220131068A1 (April 2022) Granted

Bhagwati Prasad, Alan Kalitsov and Neil Smith, “Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same – Part B”, US Patent: US 11,276,446 B1 (March, 2022) Granted

Bhagwati Prasad, Alan Kalitsov and Neil Smith, “Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same – Part A”, US Patent: US 11,264,562 B1 (March, 2022) Granted.

Bhagwati Prasad, Derek Stewart and Bruce Terris “Spinel containing magnetic tunnel junction and method of making the same – Part B”, US Patent, US 11,217,289 B1 (Jan, 2022) Granted

Bhagwati Prasad and Alan Kalitsov, “Magnetic device including multiferroic regions and methods of forming the same”, US Patent: US 11222920 B2 (Jan, 2022) Granted

Bhagwati Prasad and Alan Kalitsov, “Tunneling metamagnetic resistance memory device and methods of operating the same – Part B”, US Patent: US 11200934 B2 (Dec, 2021) Granted

Bhagwati Prasad, Derek Stewart and Bruce Terris “Spinel containing magnetic tunnel junction and method of making the same – Part A”, US Patent: US11176981B1 (Nov, 2021) Granted

Bhagwati Prasad and Alan Kalitsov, “Tunneling metamagnetic resistance memory device and methods of operating the same – Part A”, US Patent:US11152048B1 (Oct, 2021) (Granted)

Alan Kalitsov, Kumar Srinivasan and Bhagwati Prasad, “Data storage device with Voltage-assisted Magnetic Recording (VAMR) for high density magnetic recording”, US Patent: US11087791B1 (Aug, 2021) Granted

Bhagwati Prasad and Alan Kalitsov, “Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same – Part B”, US Patent: US 11069741B2 (July, 2021) Granted

Bhagwati Prasad, Alan Kalitsov, Matt Carey and Bruce Terris “Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same- Part C” US Patent: US 11056640 B2 (July, 2021) Granted

Alan Kalitsov and Bhagwati Prasad, “Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof” US Patent: US 11049538 B2 (June, 2021) (Granted).

Bhagwati Prasad, Alan Kalitsov, Matt Carey and Bruce Terris “Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same – Part B”, US Patent: US11005034B1 (May, 2021) Granted

Bhagwati Prasad, Alan Kalitsov, Matt Carey and Bruce Terris “Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same – Part A” US Patent: US10991407B1 (April, 2021) Granted

Bhagwati Prasad and Alan Kalitsov, “Ferroelectric device with multiple polarization states and method of making the same”, US Patent, US10957711B2 (March, 2021) Granted

Bhagwati Prasad and Alan Kalitsov, “Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same- Part A”, US Patent: US10964748B1 (March, 2021) Granted

Bhagwati Prasad, Chiradeep Ghosh, Manish Kumar Bhadu and Anindita Chakraborty; “A water filter candle system for removal of arsenic including associated impurities from arsenic contaminated group water and a method of manufacturing a water filter candle”, Indian Patent, Application no. 1453/KOL/2010. Granted

Bhagwati Prasad, Chiradeep Ghosh and Nikhiles Bandyopadhyay; “Multilayer bed filtering system for removal of arsenic from arsenic contaminated water”, Indian Patent, Application no. 969/KOL/2009. Granted

Bhagwati Prasad and Chiradeep Ghosh; “Method for treating arsenic contaminated water using iron industry waste product”, Indian Patent, Application no. 671/KOL/2009. Granted

Alan Kalitsov, Bhagwati Prasad, Derek Stewart “Magnetoresistive memory device including a plurality of reference layers, Filed US Patent, Application no. 17/358,990 (2021).

Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same – Part A”, Filed US Patent, Application no. 17/341,119 (2021).

Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same – Part B”, Filed US Patent, Application no. 17/341,090 (2021).

Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same – Part C”, Filed US Patent, Application no. 17/341,049 (2021).

Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar, Raghuveer S. Makala, “Ferroelectric field effect transistors having enhanced memory window and methods of making the same_A”, Filed US Patent, Application no.” 17/097,841 (2020).

Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar, Raghuveer S. Makala, “Ferroelectric field effect transistors having enhanced memory window and methods of making the same_B”, Filed US Patent, Application no.” 17/097,757 (2020).

Bhagwati Prasad, Pavan Kumar Bijalwan, Surendra Soni, Abhijeet Sangle, Soumilya Nayak, Monoji Dutta and Rajiv O Dusane; “Method for depositing hydrogenated amorphous silicon thin film (a-Si:H) solar cell on Steel substrate by hot wire chemical vapour deposition technique”, Filed Indian patent, Application no.  281/OL/2013.