Our research group investigates and develops novel electronic materials and nanoelectric devices to enable technology that disrupts the current status quo. We specialize in the synthesis, characterization and fabrication of functional oxide-based electronic materials and nanodevices that display ferroelectric, ferromagnetic, multiferroics, and Mott insulator properties. Using techniques like Pulsed Laser Deposition and Sputtering, we are able to deposit epitaxial single and multilayer oxide thin-films with atomically precise dimensions. 

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We work on a diverse range of materials such as Perovskite structures and doped HfO2 systems, multiferroic BiFeO3 systems and ferroelectric/ferromagnetic heterostructures within the Magnetoelectrics sphere. We also work on graphene and other 2D materials, especially ones that have ferroelectric, ferromagnetic and multiferroic properties. 

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Our work finds application in creating hardware for advanced computing technologies such as spintronics, iontronics, AI, IoT, Neuromorphic and Quantum computing. We have over 40 patents for a diverse range of devices such as magnetic tunnel junction, Ferroelectric, Antiferroelectric, Magnetoresistive, Multiferroic and magnetic anisotropy-based memory devices. We are also involved in designing cutting-edge Magnetic, Piezoelectric, and Magnetoelectric sensors, aiming to enhance precision and reliability in various IoT applications. One of our grand aims is to create innovative solutions that can transcend current computational barriers by enhancing the durability, capacity, and speed of Non-volatile memory and Data Storage Technologies.