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Over the past two decades, the remarkable development in computing devices has drastically transformed the world around us, particularly due to the rapid advancement in complementary metal oxide (CMOS) technology. The computing devices have been miniaturing with time while simultaneously becoming more robust and less power-hungry. However, we have now approached the fundamental limit of downscaling as deterrent factors such as power loss, quantum mechanical effect, and even the complexity of the device fabrication process, impeding further development in CMOS technology. Yet, even more disruptive electronic devices are required to tackle the surging computing demand for the Internet of Things (IoT), a large volume of data analysis, and automation. To continue further improvement in device-level or even bring the next breakthrough in computing devices, a novel physical mechanism, beyond-CMOS concept, is needed to be explored. On another side, artificial intelligence (AI) based computing devices need to synthesize a large volume of data at high speed for the smooth functioning of these devices. However, the current computation architecture does not allow the fast access of data due to the volatile nature of memory devices and the slow response time of storage devices. Therefore, there is an urgent need to develop non-volatile memory devices with fast read/write responses. To address these challenges in current computing technologies and architectures, a significant portion of the research of my group is focused on the fundamental and applied aspects of non-volatile memory and in-memory & neuromorphic computing. We conceptualize and develop the novel ferroelectric, ferromagnetic, iontronics, and magnetoelectric-based memory and computing devices. 

Another big challenge in the current usage of computing devices is the storage for rapidly growing data, especially the gigantic amount of archive data that is outpacing the amount of storage available. Currently, we store these large volumes of data in magnetic and optical storage devices that take millions of units, large physical space, and significant maintenance and operational cost. We urgently need much dense and durable storage devices to preserve the world's data. Taking this challenge as an opportunity, another aspect of the research of my group is focused on developing novel data storage technology, such as DNA storage

Technology developed

  • Nonvolatile memory devices (MRAM, FeFET, RRAM, and FTJ devices) for AI and IoT (TRL 3/5)

  • Brain-inspired patterned liquid-based computing chips (TRL-2/3)

  • Building-integrated photovoltaic solar cell (TRL-3/4)

  • Ultralow power emerging magnetoelectric memory devices (TRL-3/4)

  • Highly efficient magnetic memory devices for advanced computation (TRL-3/4)

  • Low-cost arsenic removal water filter system (TRL-7/8)

Technology developed
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