top of page

Our research group thoroughly undertakes the investigation and development of innovative Electronic, Magnetic, Energy, 2D, and Quantum Materials. A broad array of functional oxides such as ferroelectric, ferromagnetic, multiferroics, and Mott insulators are our areas of specialization. Further, conventional ferromagnetic metals and energy materials, including ferroelectrics and superparaelectrics, are also examined. The study is extended to capacitors materials, 2D materials such as graphene, and other 2D ferromagnetic and ferroelectric materials. Emergent properties of quantum materials are explored as part of our research. Thin-film deposition and functional coating are significant aspects of our work, with techniques like Pulsed Laser Deposition and Sputtering being adeptly applied to enable epitaxial growth of single and multilayer oxide and metallic thin films with atomically precise depositions.

Our work in Spintronics, Iontronics, Ferroelectrics, and Magnetoelectrics demonstrates our competence in device physics. A diverse range, including Perovskite structures and doped HfO2 systems, is covered in our research in Ferroelectrics. The investigation is also undertaken into doped HfO2 Ferroelectric tunnel junctions and Perovskite nanocomposite relaxor-based ferroelectric systems, where an energy density of 100 J/cm3 has been recently demonstrated. In the realm of Spintronics, the focus is placed on voltage-controlled magnetic anisotropy and voltage-controlled exchange coupling-based MRAM technology. Deep research is also conducted on multiferroic BiFeO3 systems and ferroelectric/ferromagnetic heterostructures within the Magnetoelectrics sphere. Additionally, progress is being made in developing piezoelectric and magnetoelectric materials-based Bioelectronic devices, offering deeper insights into the physical mechanisms underpinning these technologies.


In the realm of advanced computing technologies, hardware for Nanoelectronics, AI, and IoT, along with Neuromorphic and Quantum computing technologies, are being investigated by our group. Innovation is aimed at creating solutions that can transcend current computational barriers. Non-volatile memory and Data Storage Technologies are also a focus, with commitments to enhancing these systems' durability, capacity, and speed. Moreover, efforts are being made to design cutting-edge Magnetic, Piezoelectric, and Magnetoelectric sensors, aiming to enhance precision and reliability in various IoT applications, consequently driving the advancement of computing technologies.

Technology developed

Technology developed
  • Nonvolatile memory devices (MRAM, FeFET, RRAM, and FTJ devices) for AI and IoT (TRL 3/5)

  • Brain-inspired patterned liquid-based computing chips (TRL-2/3)

  • Building-integrated photovoltaic solar cell (TRL-3/4)

  • Ultralow power emerging magnetoelectric memory devices (TRL-3/4)

  • Highly efficient magnetic memory devices for advanced computation (TRL-3/4)

  • Low-cost arsenic removal water filter system (TRL-7/8)

bottom of page